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BLL6G1214L-250

LDMOS L-band radar power transistor

BLL6G1214L-250 Features

* Easy power control

* Integrated ESD protection

* High flexibility with respect to pulse formats

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (1.2 GHz to 1.4 GHz)

* Internally matched for ease of use

BLL6G1214L-250 General Description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 1 ms;  = 10 %; IDq = 150 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W).

BLL6G1214L-250 Datasheet (547.92 KB)

Preview of BLL6G1214L-250 PDF

Datasheet Details

Part number:

BLL6G1214L-250

Manufacturer:

Ampleon

File Size:

547.92 KB

Description:

Ldmos l-band radar power transistor.

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TAGS

BLL6G1214L-250 LDMOS L-band radar power transistor Ampleon

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