BLL6H1214L-250 Datasheet - Ampleon

BLL6H1214L-250, LDMOS L-band radar power transistor

BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 Gen.
250 W LDMOS power transistor intended for L-band radar applications in the 1.

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Datasheet Details

Part number:

BLL6H1214L-250

Manufacturer:

Ampleon

File Size:

354.19 KB

Description:

LDMOS L-band radar power transistor

Features

* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 300 s with  of 10 %:
* Output power = 250 W
* Power gain = 17 dB
* Efficiency = 55 %
* Easy power control
* Integrated ESD protection
* High flexibi

Applications

* in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 50 250 17 55 15

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BLL6H1214L-250 LDMOS L-band radar power transistor Ampleon

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