BLL6H1214L-250 LDMOS L-band radar power transistor

Ampleon

Description

BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 Gen.
250 W LDMOS power transistor intended for L-band radar applications in the 1.

📥 Download Datasheet

BLL6H1214L-250 Datasheet Preview — Preview of BLL6H1214L-250 PDF

Datasheet Specifications

Part number: BLL6H1214L-250
Manufacturer: Ampleon
File Size: 354.19 KB
Datasheet: BLL6H1214L-250-Ampleon.pdf
Description: LDMOS L-band radar power transistor

Features

* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 300 s with  of 10 %:
* Output power = 250 W
* Power gain = 17 dB
* Efficiency = 55 %
* Easy power control
* Integrated ESD protection
* High flexibi

Applications

* in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 50 250 17 55 15

BLL6H1214L-250 Distributors

📁 Related Datasheet

BLL6H0514L-130 BLL6H0514LS-130 BLL1214-250 BLL1214-250R BLL1214-35 BLL1461

📌 All Tags

BLL6H1214L-250 LDMOS L-band radar power transistor Ampleon

Ampleon BLL6H1214L-250-like datasheet