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BLL6H0514LS-130, BLL6H0514L-130 Datasheet - NXP Semiconductors

BLL6H0514LS-130 LDMOS driver transistor

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10 .

BLL6H0514LS-130 Features

* Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant

BLL6H0514L-130_NXPSemiconductors.pdf

This datasheet PDF includes multiple part numbers: BLL6H0514LS-130, BLL6H0514L-130. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLL6H0514LS-130, BLL6H0514L-130

Manufacturer:

NXP ↗ Semiconductors

File Size:

319.76 KB

Description:

Ldmos driver transistor.

Note:

This datasheet PDF includes multiple part numbers: BLL6H0514LS-130, BLL6H0514L-130.
Please refer to the document for exact specifications by model.

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TAGS

BLL6H0514LS-130 BLL6H0514L-130 LDMOS driver transistor NXP Semiconductors

BLL6H0514LS-130 Distributor