Datasheet4U Logo Datasheet4U.com

BLL6H0514LS-130, BLL6H0514L-130 - LDMOS driver transistor

BLL6H0514LS-130 Description

DataSheet.in BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev.1 * 9 August 2010 Preliminary data sheet 1.Product profile 1.1 Ge.
130 W LDMOS transistor intended for pulsed applications in the 0.

BLL6H0514LS-130 Features

* Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant

BLL6H0514LS-130 Applications

* in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 130 130 Gp (dB) 19 17 RLin (dB) 10

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: BLL6H0514LS-130, BLL6H0514L-130. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
BLL6H0514LS-130, BLL6H0514L-130
Manufacturer
NXP ↗ Semiconductors
File Size
319.76 KB
Datasheet
BLL6H0514L-130_NXPSemiconductors.pdf
Description
LDMOS driver transistor
Note
This datasheet PDF includes multiple part numbers: BLL6H0514LS-130, BLL6H0514L-130.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags

LDMOS driver transistor NXP Semiconductors
NXP Semiconductors BLL6H0514LS-130-like datasheet

BLL6H0514LS-130 Stock/Price