BLL6H0514LS-130, BLL6H0514L-130 LDMOS driver transistor

NXP Semiconductors

Description

DataSheet.in BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev.1 * 9 August 2010 Preliminary data sheet 1.Product profile 1.1 Ge.
130 W LDMOS transistor intended for pulsed applications in the 0.

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BLL6H0514LS-130 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLL6H0514LS-130, BLL6H0514L-130. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BLL6H0514LS-130, BLL6H0514L-130
Manufacturer: NXP ↗ Semiconductors
File Size: 319.76 KB
Datasheet: BLL6H0514L-130_NXPSemiconductors.pdf
Description: LDMOS driver transistor
Note: This datasheet PDF includes multiple part numbers: BLL6H0514LS-130, BLL6H0514L-130.
Please refer to the document for exact specifications by model.

Features

* Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant

Applications

* in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 130 130 Gp (dB) 19 17 RLin (dB) 10

BLL6H0514LS-130 Distributors

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