Description
BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descrip.
130 W LDMOS transistor intended for pulsed applications in the 0.
Features
* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (0.5 GHz to 1.4 GHz)
* Compliant to Directive 2002/95/EC, regard
Applications
* in the 0.5 GHz to 1.4 GHz range. Table 1. Application information
Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Mode of operation f
tp
VDS PL Gp RLin D
(MHz)
(s) (%) (V) (W) (dB) (dB) (%)
pulsed RF
960 to 1215 128 10 50 130 19 10 54
1200 to 14
