BLL6H0514LS-130, BLL6H0514L-130 Datasheet - Ampleon

BLL6H0514LS-130 LDMOS driver transistor

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Mode of operation f tp  VDS PL Gp RLin D (MHz) (s) (%) (V) (W) (dB) (dB) (%) p.

BLL6H0514LS-130 Features

* Easy power control

* Integrated ESD protection

* High flexibility with respect to pulse formats

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (0.5 GHz to 1.4 GHz)

* Compliant to Directive 2002/95/EC, regard

BLL6H0514L-130-Ampleon.pdf

BLL6H0514LS-130 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLL6H0514LS-130, BLL6H0514L-130. Please refer to the document for exact specifications by model.

BLL6H0514LS-130 Datasheet Preview Page 2

BLL6H0514LS-130 Datasheet Preview Page 3

Datasheet Details

Part number:

BLL6H0514LS-130, BLL6H0514L-130

Manufacturer:

Ampleon

File Size:

322.80 KB

Description:

Ldmos driver transistor.

Note:

This datasheet PDF includes multiple part numbers: BLL6H0514LS-130, BLL6H0514L-130.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

BLL6H0514LS-130 LDMOS driver transistor (NXP Semiconductors)

BLL6H0514L-130 LDMOS driver transistor (Ampleon)

BLL6H0514L-130 LDMOS driver transistor (NXP Semiconductors)

BLL6H0514-25 LDMOS driver transistor (Ampleon)

BLL6H0514-25 LDMOS Driver Transistor (NXP)

BLL6H1214-500 LDMOS L-band radar power transistor (Ampleon)

BLL6H1214-500 LDMOS L-band radar power transistor (NXP Semiconductors)

BLL6H1214L-250 LDMOS L-band radar power transistor (Ampleon)

TAGS

BLL6H0514LS-130 BLL6H0514L-130 LDMOS driver transistor Ampleon

BLL6H0514LS-130 Distributor