Datasheet Details
- Part number
- BLL6H1214-500
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 227.88 KB
- Datasheet
- BLL6H1214-500_NXPSemiconductors.pdf
- Description
- LDMOS L-band radar power transistor
BLL6H1214-500 Description
BLL6H1214-500 LDMOS L-band radar power transistor Rev.02 * 1 April 2010 www.DataSheet4U.com Product data sheet 1.Product profile 1.1 Gene.
500 W LDMOS power transistor intended for L-band radar applications in the 1.
BLL6H1214-500 Features
* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: Output power = 500 W Power gain = 17 dB Efficiency = 50 %
* Easy power control
* Integrated ESD protection
* High fle
BLL6H1214-500 Applications
* in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 500 Gp (dB) 17 ηD (%) 50 tr (ns) 20 tf (ns) 6
CAUTION This
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