BLL6H1214-500 Datasheet (NXP Semiconductors) - LDMOS L-band radar power transistor

BLL6H1214-500, LDMOS L-band radar power transistor

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit.

Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 5

BLL6H1214-500 Features

* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: Output power = 500 W Power gain = 17 dB Efficiency = 50 %

* Easy power control

* Integrated ESD protection

* High fle