Part number:
BLL6H1214-500
Manufacturer:
NXP ↗ Semiconductors
File Size:
227.88 KB
Description:
Ldmos l-band radar power transistor.
BLL6H1214-500_NXPSemiconductors.pdf
Datasheet Details
Part number:
BLL6H1214-500
Manufacturer:
NXP ↗ Semiconductors
File Size:
227.88 KB
Description:
Ldmos l-band radar power transistor.
BLL6H1214-500, LDMOS L-band radar power transistor
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit.
Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 5
BLL6H1214-500 Features
* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: Output power = 500 W Power gain = 17 dB Efficiency = 50 %
* Easy power control
* Integrated ESD protection
* High fle
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