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BLL6H1214-500 LDMOS L-band radar power transistor

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Description

BLL6H1214-500 LDMOS L-band radar power transistor Rev.02 * 1 April 2010 www.DataSheet4U.com Product data sheet 1.Product profile 1.1 Gene.
500 W LDMOS power transistor intended for L-band radar applications in the 1.

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Features

* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 500 W ‹ Power gain = 17 dB ‹ Efficiency = 50 %
* Easy power control
* Integrated ESD protection
* High fle

Applications

* in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 500 Gp (dB) 17 ηD (%) 50 tr (ns) 20 tf (ns) 6 CAUTION This

BLL6H1214-500 Distributors

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