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9 Hits
I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: N Out...
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8 Hits
IONS F = 1660 MHz Vcc = 28 Volts PW = Note 1 DF = Note 1 F = 1540 MHz MIN 35 6 7.6 50 10:1 TYP MAX UNITS W W dB %
FUNCTIONAL CHARACTERISTICS @ 25°C B...
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7 Hits
• • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry D...
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7 Hits
tter 4. Base
=
25 ° C)
Value Unit
Parameter
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 100°C)
1250 25 45 250 − 65 to +200
...
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7 Hits
100,3300,3500 MHz 280 330
W
Gp Power Gain
Pin=14.1W, Freq=3100,3300,3500 MHz 13 13.7
dB
D Drain Efficiency Dr Droop
Pin=14.1W, Freq=3100,3300,3...
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7 Hits
and benefits
• Single-chip fully integrated automotive FMCW RADAR transceiver with digital output
• Developed in accordance to ISO26262 SEoOC methodo...
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6 Hits
L Pout Pin Pg ηc VSWR CHARACTERISTICS Power Output Power Input Power Gain Collector Efficiency Load Mismatch Tolerance1 TEST CONDITIONS F=2700-2900 MH...
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5 Hits
and benefits
High efficiency Excellent ruggedness Designed for S-band operation Excellent thermal stability Easy power control Integrated ...
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5 Hits
and benefits
Single ended Small size High efficiency Excellent ruggedness Designed for S-band operation Excellent thermal stability Easy...
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5 Hits
• • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Dif...
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5 Hits
out Pg ηc Rl Pd VSWR-T CHARACTERISTICS Power Output Power Gain Collector Efficiency Return Loss Pulse Droop Load Mismatch Tolerance TEST CONDITIONS F=...
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5 Hits
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: Out...
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