BLS7G2729L-350P LDMOS S-band radar power transistor

NXP

Description

BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev.5 * 16 May 2014 Product data sheet 1.Product profile 1.1 Genera.
350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.

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Datasheet Specifications

Part number: BLS7G2729L-350P
Manufacturer: NXP ↗
File Size: 134.18 KB
Datasheet: BLS7G2729L-350P-NXP.pdf
Description: LDMOS S-band radar power transistor

Features

* High efficiency
* Excellent ruggedness
* Designed for S-band operation (2.7 GHz to 2.9 GHz)
* Excellent thermal stability
* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Internally matched for ease of use
* Com

Applications

* in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 2.7 to 2.9 32 35

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BLS7G2729L-350P LDMOS S-band radar power transistor NXP

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