BLS3135-10 Microwave power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product speciﬁcation 2000 Feb 01 Philips Semiconductors Product s.
1 APPLICATIONS. Common base class-C pulsed power amplifier for radar applications in the 3.

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Datasheet Specifications

Part number: BLS3135-10
Manufacturer: NXP ↗
File Size: 66.12 KB
Datasheet: BLS3135-10_PhilipsSemiconductors.pdf
Description: Microwave power transistor

Applications

* Internal input and output matching networks for an easy circuit design
* Emitter ballasting resistors improve ruggedness
* Gold metallization ensures excellent reliability
* Interdigitated emitter-base structure provides high emitter efficiency
* Multicell g

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BLS3135-10 Microwave power transistor NXP

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