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BLS3135-10

Microwave power transistor

BLS3135-10 Features

* Suitable for short and medium pulse applications

* Internal input and output matching networks for an easy circuit design

* Emitter ballasting resistors improve ruggedness

* Gold metallization ensures excellent reliability

* Interdigitated emitter-base struc

BLS3135-10 General Description

1 APPLICATIONS

* Common base class-C pulsed power amplifier for radar applications in the 3.1 to 3.5 GHz range. 2 3 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the common base connected to the.

BLS3135-10 Datasheet (66.12 KB)

Preview of BLS3135-10 PDF

Datasheet Details

Part number:

BLS3135-10

Manufacturer:

NXP ↗

File Size:

66.12 KB

Description:

Microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product speciļ¬cation 2000 Feb 01 Philips Semiconductors Product s.

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BLS3135-10 Microwave power transistor NXP

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