BLS3135-10 Datasheet - NXP

BLS3135-10 Microwave power transistor

1 APPLICATIONS * Common base class-C pulsed power amplifier for radar applications in the 3.1 to 3.5 GHz range. 2 3 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the common base connected to the.

BLS3135-10 Features

* Suitable for short and medium pulse applications

* Internal input and output matching networks for an easy circuit design

* Emitter ballasting resistors improve ruggedness

* Gold metallization ensures excellent reliability

* Interdigitated emitter-base struc

BLS3135-10_PhilipsSemiconductors.pdf