BLS6G2731-120 LDMOS S-band radar power transistor

Ampleon

Description

BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 Gener.
120 W LDMOS power transistor intended for radar applications in the 2.

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Datasheet Specifications

Part number: BLS6G2731-120
Manufacturer: Ampleon
File Size: 369.38 KB
Datasheet: BLS6G2731-120-Ampleon.pdf
Description: LDMOS S-band radar power transistor

Features

* Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with  of 10 %:
* Output power = 120 W
* Power gain = 13.5 dB
* Efficiency = 48 %
* Easy power control
* Integrated ESD protection
* High flexi

Applications

* in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 2.7 to 3.1 32 120 13.5 4

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BLS6G2731-120 LDMOS S-band radar power transistor Ampleon

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