BLS6G3135S-20, BLS6G3135-20 - LDMOS S-Band radar power transistor

NXP Semiconductors

Datasheet Details

Part number	BLS6G3135S-20, BLS6G3135-20
Manufacturer	NXP ↗ Semiconductors
File Size	263.57 KB
Description	LDMOS S-Band radar power transistor
Datasheet	BLS6G3135-20_NXPSemiconductors.pdf
Note	This datasheet PDF includes multiple part numbers: BLS6G3135S-20, BLS6G3135-20. Please refer to the document for exact specifications by model.

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %: N Output power = 20 W N Power gain = 15.5 dB N Efﬁciency = 45 % I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semic.

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Published: Jun 18, 2010 |