Description
BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev.03 * 3 March 2009 www.DataSheet4U.com Product data sheet 1.Product pr.
Features
* I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %: N Output power = 20 W N Power gain = 15.5 dB N Efficiency = 45 % I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal staApplications
* in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode of operation f (GHz) Pulsed RF VDS (V) PL (W) 20 Gp (dB) 15.5 ηD (%) 45 tr (ns) 20 tf (ns) 10 3.1 to 3.5 32 CAUTIONBLS6G3135S-20 Distributors
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