BLS6G2731-6G Datasheet - Ampleon

BLS6G2731-6G LDMOS S-Band radar power transistor

6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of operation f (GHz) VDS PL (V) (W) Gp D (dB) (%) t.

BLS6G2731-6G Features

* Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 s and a  of 10 %:

* Output power = 6 W

* Power gain = 15 dB

* Efficiency = 3

BLS6G2731-6G Datasheet (341.04 KB)

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Datasheet Details

Part number:

BLS6G2731-6G

Manufacturer:

Ampleon

File Size:

341.04 KB

Description:

Ldmos s-band radar power transistor.

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BLS6G2731-6G LDMOS S-Band radar power transistor Ampleon

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