BLS6G2731-6G LDMOS S-Band radar power transistor

Ampleon

Description

BLS6G2731-6G LDMOS S-Band radar power transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
6 W LDMOS power transistor intended for radar applications in the 2.

📥 Download Datasheet

BLS6G2731-6G Datasheet Preview — Preview of BLS6G2731-6G PDF

Datasheet Specifications

Part number: BLS6G2731-6G
Manufacturer: Ampleon
File Size: 341.04 KB
Datasheet: BLS6G2731-6G-Ampleon.pdf
Description: LDMOS S-Band radar power transistor

Features

* Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 s and a  of 10 %:
* Output power = 6 W
* Power gain = 15 dB
* Efficiency = 3

Applications

* in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of operation f (GHz) VDS PL (V) (W) Gp D (dB) (%) tr (ns) tf (ns) pulsed RF 2.7 to 3.1 32 6 15 33 20 10

BLS6G2731-6G Distributors

📁 Related Datasheet

BLS6G2731S-130 BLS6G2933P-200 BLS6G3135-120 BLS6G3135-20 BLS6G3135S-120 BLS6G3135S-20

📌 All Tags

BLS6G2731-6G LDMOS S-Band radar power transistor Ampleon

Ampleon BLS6G2731-6G-like datasheet