BLS6G3135-20 Datasheet (NXP Semiconductors) - LDMOS S-Band radar power transistor

BLS6G3135-20, LDMOS S-Band radar power transistor

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB production test circuit.

Mode of operation f (GHz) Pulsed RF VDS (V) PL (W) 20 Gp (dB)

BLS6G3135-20 Features

* I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %: N Output power = 20 W N Power gain = 15.5 dB N Efﬁciency = 45 % I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal sta