Datasheet Details
Part number:
BLS6G3135-120
Manufacturer:
Ampleon
File Size:
371.09 KB
Description:
LDMOS S-Band radar power transistor
Features
* Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 s with of 10 %:
* Output power = 120 W
* Gain = 11 dB
* Efficiency = 43 %
* Easy power control
* Integrated ESD protection
* Excellent ru
BLS6G3135-120, LDMOS S-Band radar power transistor
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W
BLS6G3135-120 Distributor
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