BLS6G2735L-30 S-band LDMOS transistor

NXP

Description

BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev.3 * 24 September 2012 Product data sheet 1.Product profile 1.1 General descriptio.
30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.

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Datasheet Specifications

Part number: BLS6G2735L-30
Manufacturer: NXP ↗
File Size: 681.75 KB
Datasheet: BLS6G2735L-30-NXP.pdf
Description: S-band LDMOS transistor

Features

* Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substanc

Applications

* in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f (GHz) pulsed RF pulsed RF pulsed RF 3.1 to 3.5 2.7 to 3.3 2.7 to 3.5 VDS (V) 32 32 32 PL (W) 30 35 30 Gp (dB) 13 14 12 D (%) 50

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BLS6G2735L-30 S-band LDMOS transistor NXP

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