BLS2731-110 Microwave power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product speciﬁcation Supersedes data of 1997 Nov 05 1998 Jan 30 Philips S.
collector 1 APPLICATIONS. Common base class-C pulsed power amplifiers for radar applications in the 2.

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Datasheet Specifications

Part number: BLS2731-110
Manufacturer: NXP ↗
File Size: 85.97 KB
Datasheet: BLS2731-110_PhilipsSemiconductors.pdf
Description: Microwave power transistor

Applications

* Internal input and output matching networks for an easy circuit design
* Emitter ballasting resistors improve ruggedness
* Gold metallization ensures excellent reliability
* Interdigitated emitter-base structure provides high emitter efficiency
* Multicell g

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BLS2731-110 Microwave power transistor NXP

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