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BLS2731-110 Datasheet - NXP

BLS2731-110 Microwave power transistor

collector 1 APPLICATIONS * Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT423A) with the common base connected t.

BLS2731-110 Features

* Suitable for short and medium pulse applications

* Internal input and output matching networks for an easy circuit design

* Emitter ballasting resistors improve ruggedness

* Gold metallization ensures excellent reliability

* Interdigitated emitter-base struc

BLS2731-110_PhilipsSemiconductors.pdf