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BLS2731-110

Microwave power transistor

BLS2731-110 Features

* Suitable for short and medium pulse applications

* Internal input and output matching networks for an easy circuit design

* Emitter ballasting resistors improve ruggedness

* Gold metallization ensures excellent reliability

* Interdigitated emitter-base struc

BLS2731-110 General Description

collector 1 APPLICATIONS

* Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT423A) with the common base connected t.

BLS2731-110 Datasheet (85.97 KB)

Preview of BLS2731-110 PDF

Datasheet Details

Part number:

BLS2731-110

Manufacturer:

NXP ↗

File Size:

85.97 KB

Description:

Microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product speciļ¬cation Supersedes data of 1997 Nov 05 1998 Jan 30 Philips S.

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BLS2731-110 Microwave power transistor NXP

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