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BLS3135-20

Microwave power transistor

BLS3135-20 Features

* Suitable for short and medium pulse applications

* Internal input and output matching networks for an easy circuit design

* Emitter ballasting resistors improve ruggedness

* Gold metallization ensures excellent reliability

* Interdigitated emitter-base struc

BLS3135-20 General Description

1 APPLICATIONS

* Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz range. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the fla.

BLS3135-20 Datasheet (66.23 KB)

Preview of BLS3135-20 PDF

Datasheet Details

Part number:

BLS3135-20

Manufacturer:

NXP ↗

File Size:

66.23 KB

Description:

Microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product speciļ¬cation 2000 Feb 01 Philips Semiconductors .

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TAGS

BLS3135-20 Microwave power transistor NXP

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