BLS2731-10 Datasheet - NXP

BLS2731-10 Microwave power transistor

1 3 2 MBK132 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the common base connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common base class-C test circuit. MODE OF OPERA.

BLS2731-10 Features

* Suitable for short and medium pulse applications

* Internal input and output matching networks for an easy circuit design

* Emitter ballasting resistors improve ruggedness

* Gold metallization ensures excellent reliability

* Interdigitated emitter-base struc

BLS2731-10_PhilipsSemiconductors.pdf