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BLS2731-10 Microwave power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-10 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Ph.
1 3 2 MBK132 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445C.

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Applications

* Internal input and output matching networks for an easy circuit design
* Emitter ballasting resistors improve ruggedness
* Gold metallization ensures excellent reliability
* Interdigitated emitter-base structure provides high emitter efficiency
* Multicell g

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