Description
BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 Gener.
120 W LDMOS power transistor intended for radar applications in the 2.
Features
* Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with of 10 %:
* Output power = 120 W
* Power gain = 13.5 dB
* Efficiency = 48 %
* Easy power control
* Integrated ESD protection
* High flexi
Applications
* in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation
f
VDS PL
Gp D
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
2.7 to 3.1 32
120
13.5 4
