BLS6G3135S-120 Datasheet, Transistor, NXP Semiconductors

Image	Manufacturer	Part Number	B2B mpn	Description	Distributor	In Stock	Quantity	Price	Buy Now
	Ampleon	BLS6G3135S-120	BLS6G3135S-120,112	RF MOSFET LDMOS 32V SOT502B	DigiKey	0	0	$0	🛒 Buy Now

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📄 Datasheet

Description:

Ldmos s-band radar power transistor. 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF

✔ BLS6G3135S-120 Features

I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: N Output power = 12

✔ BLS6G3135S-120 Application

in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp =

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BLS6G3135S-120 LDMOS S-Band radar power transistor NXP Semiconductors

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BLS6G3135S-120,112

LDMOS POWER TRANSISTOR - Trays (Alt: BLS6G3135S-120,112)

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BLS6G3135S-120

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49 In Stock

Qty : 600 units

Unit Price : $0