Part number:
BLS6G2731S-130
Manufacturer:
File Size:
243.93 KB
Description:
Ldmos s-band radar power transistor.
BLS6G2731S-130_PhilipsSemiconductors.pdf
Datasheet Details
Part number:
BLS6G2731S-130
Manufacturer:
File Size:
243.93 KB
Description:
Ldmos s-band radar power transistor.
BLS6G2731S-130, LDMOS S-band radar power transistor
130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL
BLS6G2731S-130 Features
* Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 130 W Power gain = 12.5 dB Efficiency = 47 %
* Easy power control
* Integrated ESD protection
* High f
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