BLS6G2731S-130 Datasheet - NXP

BLS6G2731S-130 LDMOS S-band radar power transistor

130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL.

BLS6G2731S-130 Features

* Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 130 W Power gain = 12.5 dB Efficiency = 47 %

* Easy power control

* Integrated ESD protection

* High f

BLS6G2731S-130_PhilipsSemiconductors.pdf