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BLS6G2731S-130

LDMOS S-band radar power transistor

BLS6G2731S-130 Features

* Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 130 W ‹ Power gain = 12.5 dB ‹ Efficiency = 47 %

* Easy power control

* Integrated ESD protection

* High f

BLS6G2731S-130 Datasheet (243.93 KB)

Preview of BLS6G2731S-130 PDF

Datasheet Details

Part number:

BLS6G2731S-130

Manufacturer:

NXP ↗

File Size:

243.93 KB

Description:

Ldmos s-band radar power transistor.
www.DataSheet4U.com BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 01

* 26 July 2010 Objective data sheet 1. Product profile 1.1 Ge.

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BLS6G2731S-130 LDMOS S-band radar power transistor NXP

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