BLS6G2731S-130 Datasheet - NXP

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BLS6G2731S-130 LDMOS S-band radar power transistor

www.DataSheet4U.com BLS6G2731S-130 LDMOS S-band radar power transistor Rev.01 * 26 July 2010 Objective data sheet 1.Product profile 1.1 Ge.
130 W LDMOS power transistor intended for radar applications in the 2.

BLS6G2731S-130_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BLS6G2731S-130

Manufacturer:

NXP ↗

File Size:

243.93 KB

Description:

LDMOS S-band radar power transistor

Features

* Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 130 W Power gain = 12.5 dB Efficiency = 47 %
* Easy power control
* Integrated ESD protection
* High f

Applications

* in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 130 Gp (dB) 12.5 ηD (%) 47 tr (ns) 20 tf (ns) 6 CAUTION

BLS6G2731S-130 Distributors

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BLS6G2731S-130 LDMOS S-band radar power transistor NXP

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