BLS6G2731S-130 Datasheet, Transistor, NXP

BLS6G2731S-130 Features

• Transistor
• Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 130 W ‹ Power g

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BLS6G2731S-130

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📄 Datasheet

Description:

Ldmos s-band radar power transistor. 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF

BLS6G2731S-130 Application

• Applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100

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BLS6G2731S-130

NXP

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