Description
BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descripti.
30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.
Features
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (
Applications
* in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 50 mA. Test signal
f
VDS
PL
Gp
D
(GHz)
(V)
(W) (dB) (%)
tr (ns)
tf (ns)
Typical RF performance in a class-AB production test circuit i
