BLS6G2735L-30 S-band LDMOS transistor

Ampleon

Description

BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descripti.
30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.

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Datasheet Specifications

Part number: BLS6G2735L-30
Manufacturer: Ampleon
File Size: 553.42 KB
Datasheet: BLS6G2735L-30-Ampleon.pdf
Description: S-band LDMOS transistor

Features

* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (

Applications

* in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) tr (ns) tf (ns) Typical RF performance in a class-AB production test circuit i

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BLS6G2735L-30 S-band LDMOS transistor Ampleon

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