BLS6G2933S-130 LDMOS S-band radar power transistor

Ampleon

Description

BLS6G2933S-130 LDMOS S-band radar power transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
130 W LDMOS power transistor intended for radar applications in the 2.

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Datasheet Specifications

Part number: BLS6G2933S-130
Manufacturer: Ampleon
File Size: 308.01 KB
Datasheet: BLS6G2933S-130-Ampleon.pdf
Description: LDMOS S-band radar power transistor

Features

* Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 s with  of 10 %:
* Output power = 130 W
* Power gain = 12.5 dB
* Efficiency = 47 %
* Easy power control
* Integrated ESD protection
* High flexi

Applications

* in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f (GHz) VDS PL (V) (W) Gp D (dB) (%) tr (ns) tf (ns) pulsed RF 2.9 to 3.3 32 130 12.5 47 2

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BLS6G2933S-130 LDMOS S-band radar power transistor Ampleon

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