BLS6G2933S-130 Datasheet - Ampleon

BLS6G2933S-130 LDMOS S-band radar power transistor

130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f (GHz) VDS PL (V) (W) Gp D (dB) (%).

BLS6G2933S-130 Features

* Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 s with  of 10 %:

* Output power = 130 W

* Power gain = 12.5 dB

* Efficiency = 47 %

* Easy power control

* Integrated ESD protection

* High flexi

BLS6G2933S-130-Ampleon.pdf

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Datasheet Details

Part number:

BLS6G2933S-130

Manufacturer:

Ampleon

File Size:

308.01 KB

Description:

Ldmos s-band radar power transistor.

BLS6G2933S-130 Distributor

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BLS6G2933S-130 BLS6G2933S-130 LDMOS S-band radar power transistor Ampleon