BLS2933-100 Datasheet - NXP

BLS2933-100 Microwave power LDMOS transistor

100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range. Table 1: Typical performance tp = 200 µs; δ = 12 %; Tcase = 25 °C; in a class-AB production test circuit. Mode of operation class AB f (GHz) 2.9 to 3.3 VDS (V) 32 PL (W.

BLS2933-100 Features

* I I I I I I Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Internally matched for ease of use 1.3 Applications I S-band radar applications Philips Semiconductors BLS2933-100 Microwave power LDMOS

BLS2933-100_PhilipsSemiconductors.pdf