BLS2933-100 Microwave power LDMOS transistor

NXP

Description

www.DataSheet4U.com BLS2933-100 Microwave power LDMOS transistor Rev.01 * 1 August 2006 Product data sheet 1.Product proﬁle 1.1 General de.
100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.

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Datasheet Specifications

Part number: BLS2933-100
Manufacturer: NXP ↗
File Size: 106.42 KB
Datasheet: BLS2933-100_PhilipsSemiconductors.pdf
Description: Microwave power LDMOS transistor

Applications

* in the 2.9 GHz to 3.3 GHz frequency range. Table 1: Typical performance tp = 200 µs; δ = 12 %; Tcase = 25 °C; in a class-AB production test circuit. Mode of operation class AB f (GHz) 2.9 to 3.3 VDS (V) 32 PL (W) 100 Gp (dB) 8 ηD (%) 40 IDq (mA) 20 CAUTION This device is sensitive to ElectroStatic

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BLS2933-100 Microwave power LDMOS transistor NXP

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