BLS2933-100 Datasheet, Transistor, NXP

BLS2933-100 Features

• Transistor I I I I I I Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Internally matched for ea

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BLS2933-100

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NXP ↗

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📄 Datasheet

Description:

Microwave power ldmos transistor. 100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range. T

BLS2933-100 Application

• Applications in the 2.9 GHz to 3.3 GHz frequency range. Table 1: Typical performance tp = 200 µs; δ = 12 %; Tcase = 25 °C; in a class-AB production

TAGS

BLS2933-100

NXP

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