Description
BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 General.
20 W LDMOS power transistor intended for radar applications in the 3.
Features
* Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 s and a of 10 %:
* Output power = 20 W
* Power gain = 15.5 dB
* Efficiency = 45 %
* Integrated ESD protection
* Excellent ruggedness
* High effi
Applications
* in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode of operation f
VDS
PL
Gp
D
tr
tf
(GHz) (V)
(W)
(dB)
(%)
(ns) (ns)
Pulsed RF
3.1 to 3.5 32 20 15.5 45