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BLS6G3135S-120, BLS6G3135-120 LDMOS S-Band radar power transistor

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Description

BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 Gener.
120 W LDMOS power transistor intended for radar applications in the 3.

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This datasheet PDF includes multiple part numbers: BLS6G3135S-120, BLS6G3135-120. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BLS6G3135S-120, BLS6G3135-120
Manufacturer
Ampleon
File Size
371.09 KB
Datasheet
BLS6G3135-120-Ampleon.pdf
Description
LDMOS S-Band radar power transistor
Note
This datasheet PDF includes multiple part numbers: BLS6G3135S-120, BLS6G3135-120.
Please refer to the document for exact specifications by model.

Features

* Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 s with  of 10 %:
* Output power = 120 W
* Gain = 11 dB
* Efficiency = 43 %
* Easy power control
* Integrated ESD protection
* Excellent ru

Applications

* in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 3.1 to 3.5 32 120 11 43

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