BLS6G3135S-120, BLS6G3135-120 - LDMOS S-Band radar power transistor

Ampleon

Datasheet Details

Part number	BLS6G3135S-120, BLS6G3135-120
Manufacturer	Ampleon
File Size	371.09 KB
Description	LDMOS S-Band radar power transistor
Datasheet	BLS6G3135-120-Ampleon.pdf
Note	This datasheet PDF includes multiple part numbers: BLS6G3135S-120, BLS6G3135-120. Please refer to the document for exact specifications by model.

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 s with  of 10 %:.
Output power = 120 W.
Gain = 11 dB.
Efficiency = 43 %.
Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.

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Published: Apr 26, 2018 |