BLS6G2933S-130 Datasheet - NXP Semiconductors

BLS6G2933S-130 LDMOS S-band radar power transistor

130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.9 to 3.3 VDS (V) 32 PL.

BLS6G2933S-130 Features

* I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %: N Output power = 130 W N Power gain = 12.5 dB N Efﬁciency = 47 % I Easy power control I Integrated ESD protection I High ﬂexibility with respect to pulse f

BLS6G2933S-130_NXPSemiconductors.pdf