Datasheet Details
Part number:
BLS6G2933S-130
Manufacturer:
NXP ↗ Semiconductors
File Size:
116.11 KB
Description:
LDMOS S-band radar power transistor
Features
* I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %: N Output power = 130 W N Power gain = 12.5 dB N Efficiency = 47 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse f
BLS6G2933S-130_NXPSemiconductors.pdf
BLS6G2933S-130, LDMOS S-band radar power transistor
130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation pulsed RF f (GHz) 2.9 to 3.3 VDS (V) 32 PL
BLS6G2933S-130 Distributor
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