BLS6G2933S-130

LDMOS S-band radar power transistor

NXP Semiconductors

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	Ampleon	BLS6G2933S-130,112	RF MOSFET LDMOS 32V CDFM2	DigiKey	0	60 units	$467.34	🛒 Buy Now

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Part number:

BLS6G2933S-130

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NXP ↗ Semiconductors

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116.11 KB

Description:

Ldmos s-band radar power transistor.
www.DataSheet4U.com BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 * 11 December 2008 O.
130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table .

✔ BLS6G2933S-130 Features

I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %: N Output power = 130 W N

✔ BLS6G2933S-130 Application

in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp =

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BLS6G2933S-130 LDMOS S-band radar power transistor NXP Semiconductors

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BLS6G2933S-130,112

LDMOS POWER TRANSISTOR - Trays (Alt: BLS6G2933S-130,112)

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