Datasheet Specifications
- Part number
- BLS6G2933S-130
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 116.11 KB
- Datasheet
- BLS6G2933S-130_NXPSemiconductors.pdf
- Description
- LDMOS S-band radar power transistor
Description
www.DataSheet4U.com BLS6G2933S-130 LDMOS S-band radar power transistor Rev.01 * 11 December 2008 Objective data sheet 1.Product profile 1.1.
Features
* I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %: N Output power = 130 W N Power gain = 12.5 dB N Efficiency = 47 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse fApplications
* in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.9 to 3.3 VDS (V) 32 PL (W) 130 Gp (dB) 12.5 ηD (%) 47 tr (ns) 20 tf (ns) 6 CAUTIONBLS6G2933S-130 Distributors
📁 Related Datasheet
📌 All Tags