Datasheet Details
Part number:
BLS6G2735LS-30, BLS6G2735L-30
Manufacturer:
File Size:
681.75 KB
Description:
S-band ldmos transistor.
Note:
This datasheet PDF includes multiple part numbers: BLS6G2735LS-30, BLS6G2735L-30.
Please refer to the document for exact specifications by model.
BLS6G2735LS-30, BLS6G2735L-30, S-band LDMOS transistor
30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.
Table 1.
Application information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 50 mA.
Test signal f (GHz) pulsed RF pulsed RF pulsed RF 3.1 to 3.5 2.7 to 3.3 2.7 to 3.5 V
BLS6G2735LS-30 Features
* Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substanc
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