* Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substanc
BLS6G2735LS-30 Datasheet (681.75 KB)
BLS6G2735LS-30
681.75 KB
S-band ldmos transistor.
BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
Rev. 3
* 24 September 2012 Product data sheet
1. Product profile
1.1 General descriptio.
📁 Related Datasheet
BLS6G2735LS-30 S-band LDMOS transistor (Ampleon)
BLS6G2735L-30 S-band LDMOS transistor (Ampleon)
BLS6G2735L-30 S-band LDMOS transistor (NXP)
BLS6G2731-120 LDMOS S-band radar power transistor (Ampleon)
BLS6G2731-120 LDMOS S-band Radar Power Transistor (NXP)
BLS6G2731-6G LDMOS S-Band radar power transistor (Ampleon)
BLS6G2731-6G LDMOS S-Band radar power transistor (NXP Semiconductors)
BLS6G2731S-120 LDMOS S-band radar power transistor (Ampleon)
BLS6G2731S-120 LDMOS S-band Radar Power Transistor (NXP)
BLS6G2731S-130 LDMOS S-band radar power transistor (NXP)
