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BLS3135-50

Microwave power transistor

BLS3135-50 Features

* Suitable for short and medium pulse applications

* Internal input and output matching networks for an easy circuit design

* Emitter ballasting resistors improve ruggedness

* Gold metallization ensures excellent reliability

* Interdigitated emitter-base struc

BLS3135-50 General Description

1 APPLICATIONS

* Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flan.

BLS3135-50 Datasheet (62.21 KB)

Preview of BLS3135-50 PDF

Datasheet Details

Part number:

BLS3135-50

Manufacturer:

NXP ↗

File Size:

62.21 KB

Description:

Microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product speciļ¬cation Supersedes data of 1998 Apr 06 .

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TAGS

BLS3135-50 Microwave power transistor NXP

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