BLS3135-50 Microwave power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product speciﬁcation Supersedes data of 1998 Apr 06 .
1 APPLICATIONS. Common base class-C pulsed power amplifiers for radar applications in the 3.

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Datasheet Specifications

Part number: BLS3135-50
Manufacturer: NXP ↗
File Size: 62.21 KB
Datasheet: BLS3135-50_PhilipsSemiconductors.pdf
Description: Microwave power transistor

Applications

* Internal input and output matching networks for an easy circuit design
* Emitter ballasting resistors improve ruggedness
* Gold metallization ensures excellent reliability
* Interdigitated emitter-base structure provides high emitter efficiency
* Multicell g

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BLS3135-50 Microwave power transistor NXP

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