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BLS7G2730L-200P

LDMOS S-band radar power transistor

BLS7G2730L-200P Features

* High efficiency

* Excellent ruggedness

* Designed for broadband operation

* Excellent thermal stability

* Easy power control

* Integrated ESD protection

* High flexibility with respect to pulse formats

* I

BLS7G2730L-200P General Description

200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C. Test signal f VDS (GHz) (V) Class-AB production test circuit pulsed RF [1] 2.7 to 3.0 32 Application circuit .

BLS7G2730L-200P Datasheet (419.22 KB)

Preview of BLS7G2730L-200P PDF

Datasheet Details

Part number:

BLS7G2730L-200P

Manufacturer:

Ampleon

File Size:

419.22 KB

Description:

Ldmos s-band radar power transistor.
BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev. 4

* 1 September 2015 Product data sheet 1. Product profile 1.1 G.

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TAGS

BLS7G2730L-200P LDMOS S-band radar power transistor Ampleon

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