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BLS7G3135LS-350P Datasheet - NXP

BLS7G3135LS-350P LDMOS S-band radar power transistor

350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal f (GHz) VDS PL Gp D (V) (W) (dB) (%) .

BLS7G3135LS-350P Features

* Easy power control

* Integrated ESD protection

* High flexibility with respect to pulse formats

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (3.1 GHz to 3.5 GHz)

* Internally matched for ease of use

BLS7G3135LS-350P Datasheet (147.77 KB)

Preview of BLS7G3135LS-350P PDF

Datasheet Details

Part number:

BLS7G3135LS-350P

Manufacturer:

NXP ↗

File Size:

147.77 KB

Description:

Ldmos s-band radar power transistor.

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Stock and price

Distributor
NXP Semiconductors
MPC5553EVBE
0 In Stock
Qty : 1 units
Unit Price : $835.13

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BLS7G3135LS-350P LDMOS S-band radar power transistor NXP

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