Description
BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev.3 * 29 October 2013 Product data sheet 1.Product profile 1.1 Ge.
350 W LDMOS power transistor intended for radar applications in the 3.
Features
* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (3.1 GHz to 3.5 GHz)
* Internally matched for ease of use
Applications
* in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal
f (GHz)
VDS
PL
Gp
D
(V)
(W) (dB)
(%)
tr tf (ns) (ns)
pulsed RF
3.1
32 350 12 43 5
5
3.3
32
