BLS7G3135LS-200 LDMOS S-band radar power transistor

NXP

Description

BLS7G3135LS-200 LDMOS S-band radar power transistor Rev.2 * 23 September 2013 Product data sheet 1.Product profile 1.1 General descriptio.
200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz.

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Datasheet Specifications

Part number: BLS7G3135LS-200
Manufacturer: NXP ↗
File Size: 112.70 KB
Datasheet: BLS7G3135LS-200-NXP.pdf
Description: LDMOS S-band radar power transistor

Features

* High efficiency
* Excellent ruggedness
* Designed for broadband operation
* Excellent thermal stability
* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Internally matched for ease of use (input and output)
* Co

Applications

* in the frequency range from 3100 MHz to 3500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Test signal f (GHz) VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns) pulsed RF 3.1 32 200 12

BLS7G3135LS-200 Distributors

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BLS7G3135LS-200 LDMOS S-band radar power transistor NXP

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