Description
BLL9G1214L-600; BLL9G1214LS-600 LDMOS L-band radar power transistor Rev.1 * 27 November 2017 Product data sheet 1.Product profile 1.1 Gen.
600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.
Features
* High efficiency
* Excellent ruggedness
* Designed for L-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* High flexibility with respect to pulse formats
* Internally match
Applications
* in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal
f
VDS
PL(3dB)
Gp
D
(GHz)
(V) (W)
(dB)
(%)
pulsed RF
1.2 to 1.4
32 600
19 60
1.2 Fea
