BLL9G1214L-600 Datasheet - Ampleon

BLL9G1214L-600 LDMOS L-band radar power transistor

600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal f VDS PL(3dB) Gp D (GHz) (V) (W.

BLL9G1214L-600 Features

* High efficiency

* Excellent ruggedness

* Designed for L-band operation

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to pulse formats

* Internally match

BLL9G1214L-600 Datasheet (485.01 KB)

BLL9G1214L-600 Datasheet Preview — Preview of BLL9G1214L-600 PDF

Datasheet Details

Part number:

BLL9G1214L-600

Manufacturer:

Ampleon

File Size:

485.01 KB

Description:

Ldmos l-band radar power transistor.

📁 Related Datasheet

BLL9G1214LS-600 LDMOS L-band radar power transistor (Ampleon)

BLL1214-250 L-band radar LDMOS transistor (NXP)

BLL1214-250R LDMOS L-band radar power transistor (NXP Semiconductors)

BLL1214-35 L-band radar LDMOS driver transistor (NXP Semiconductors)

BLL1461 1A Linear Regulator (BELLING)

BLL2453 500KHz COT Synchronous Step-Down DC/DC Converter (BELLING)

BLL2681 70V High Efficiency Synchronous Step-Down DC/DC Converter (BELLING)

BLL2740 100% Duty Cycle CC&CV Buck Converter (BELLING)

TAGS

BLL9G1214L-600 LDMOS L-band radar power transistor Ampleon

BLL9G1214L-600 Distributor