BLL9G1214L-600 LDMOS L-band radar power transistor

Ampleon

Description

BLL9G1214L-600; BLL9G1214LS-600 LDMOS L-band radar power transistor Rev.1 * 27 November 2017 Product data sheet 1.Product profile 1.1 Gen.
600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.

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Datasheet Specifications

Part number: BLL9G1214L-600
Manufacturer: Ampleon
File Size: 485.01 KB
Datasheet: BLL9G1214L-600-Ampleon.pdf
Description: LDMOS L-band radar power transistor

Features

* High efficiency
* Excellent ruggedness
* Designed for L-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* High flexibility with respect to pulse formats
* Internally match

Applications

* in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal f VDS PL(3dB) Gp D (GHz) (V) (W) (dB) (%) pulsed RF 1.2 to 1.4 32 600 19 60 1.2 Fea

BLL9G1214L-600 Distributors

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BLL9G1214L-600 LDMOS L-band radar power transistor Ampleon

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