BLL8H1214L-500 Datasheet (NXP) - LDMOS L-band radar power transistor

BLL8H1214L-500, LDMOS L-band radar power transistor

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 150 mA; in a class-AB production test circuit.

Test signal f VDS PL Gp D tr tf (GHz) (V) (W

BLL8H1214L-500 Features

* Easy power control

* Integrated dual side ESD protection

* High flexibility with respect to pulse formats

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (1.2 GHz to 1.4 GHz)

* Internally matched for ease of