BLL6H0514-25 Datasheet - NXP

BLL6H0514-25 LDMOS Driver Transistor

25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (µs) 128 300 δ (%) 10 10 V.

BLL6H0514-25 Features

* I I I I I I I I Easy power control Integrated ESD protection High ﬂexibility with respect to pulse formats Excellent ruggedness High efﬁciency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Subst

BLL6H0514-25 Datasheet (88.95 KB)