BLL8H1214L-250 LDMOS L-band radar power transistor

NXP

Description

BLL8H1214L-250; BLL8H1214LS-250 LDMOS L-band radar power transistor Rev.2 * 13 January 2015 Product data sheet 1.Product profile 1.1 Gene.
250 W LDMOS power transistor intended for L-band radar applications in the 1.

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Datasheet Specifications

Part number: BLL8H1214L-250
Manufacturer: NXP ↗
File Size: 121.94 KB
Datasheet: BLL8H1214L-250-NXP.pdf
Description: LDMOS L-band radar power transistor

Features

* Easy power control
* Integrated dual side ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (1.2 GHz to 1.4 GHz)
* Internally matched for ease of

Applications

* in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 50 250 17 55 15 5 1.

BLL8H1214L-250 Distributors

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BLL8H1214L-250 LDMOS L-band radar power transistor NXP

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