BLL6H1214LS-250, BLL6H1214L-250 Datasheet - NXP

BLL6H1214LS-250 LDMOS L-band Radar Power Transistor

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 5.

BLL6H1214LS-250 Features

* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: Output power = 250 W Power gain = 17 dB Efficiency = 55 %

* Easy power control

* Integrated ESD protection

* High fle

BLL6H1214L-250_NXP.pdf

BLL6H1214LS-250 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLL6H1214LS-250, BLL6H1214L-250. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number:

BLL6H1214LS-250, BLL6H1214L-250

Manufacturer:

NXP ↗

File Size:

168.65 KB

Description:

Ldmos l-band radar power transistor.

Note:

This datasheet PDF includes multiple part numbers: BLL6H1214LS-250, BLL6H1214L-250.
Please refer to the document for exact specifications by model.

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TAGS

BLL6H1214LS-250 BLL6H1214L-250 LDMOS L-band Radar Power Transistor NXP

BLL6H1214LS-250 Distributor