BLL6H1214LS-250, BLL6H1214L-250 LDMOS L-band Radar Power Transistor

NXP

Description

BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev.01 * 11 December 2009 Objective data sheet 1.Product profile 1.1 Ge.
250 W LDMOS power transistor intended for L-band radar applications in the 1.

📥 Download Datasheet

BLL6H1214LS-250 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLL6H1214LS-250, BLL6H1214L-250. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BLL6H1214LS-250, BLL6H1214L-250
Manufacturer: NXP ↗
File Size: 168.65 KB
Datasheet: BLL6H1214L-250_NXP.pdf
Description: LDMOS L-band Radar Power Transistor
Note: This datasheet PDF includes multiple part numbers: BLL6H1214LS-250, BLL6H1214L-250.
Please refer to the document for exact specifications by model.

Features

* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: Output power = 250 W Power gain = 17 dB Efficiency = 55 %
* Easy power control
* Integrated ESD protection
* High fle

Applications

* in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 250 Gp (dB) 17 ηD (%) 55 tr (ns) 15 tf (ns) 5 CAUTION This

BLL6H1214LS-250 Distributors

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BLL6H1214L-250 LDMOS L-band Radar Power Transistor NXP

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