PTFC260202FC - Thermally-Enhanced High Power RF LDMOS FET

Infineon

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Datasheet Details

Part number: PTFC260202FC
Manufacturer: Infineon ↗
File Size: 305.74 KB
Datasheet: PTFC260202FC-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

PTFC260202FC Product details

Description

The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band.

Features

Broadband input matching.
Typical CW performance, 2620 MHz, 28 V - Output power at P1dB = 25 W - Efficiency = 57% - Linear Gain = 19.4 dB.
Capable of handling 10:1 VSWR @28 V, 25 W (CW) output power.
Integrated ESD protection.
Human Body Model Class 1B (per ANSI/ESDA.

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Thermally-Enhanced High Power LDMOS FET Infineon

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