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PTFC260202FC Datasheet - Infineon

PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET

The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC260.

PTFC260202FC Features

* Broadband input matching

* Typical CW performance, 2620 MHz, 28 V - Output power at P1dB = 25 W - Efficiency = 57% - Linear Gain = 19.4 dB

* Capable of handling 10:1 VSWR @28 V, 25 W (CW) output power

* Integrated ESD protection

* Human Body Model Cla

PTFC260202FC-Infineon.pdf

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Datasheet Details

Part number:

PTFC260202FC

Manufacturer:

Infineon ↗

File Size:

305.74 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTFC260202FC PTFC260202FC Thermally-Enhanced High Power LDMOS FET Infineon

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