PTFC260202FC Datasheet - Infineon

PTFC260202FC, Thermally-Enhanced High Power RF LDMOS FET

PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 * 2690 MHz .
The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz freq.

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Datasheet Details

Part number:

PTFC260202FC

Manufacturer:

Infineon ↗

File Size:

305.74 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* Broadband input matching
* Typical CW performance, 2620 MHz, 28 V - Output power at P1dB = 25 W - Efficiency = 57% - Linear Gain = 19.4 dB
* Capable of handling 10:1 VSWR @28 V, 25 W (CW) output power
* Integrated ESD protection
* Human Body Model Cla

Applications

* in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC260202FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 0.17 A, ƒ = 262

PTFC260202FC Distributors

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PTFC260202FC Thermally-Enhanced High Power LDMOS FET Infineon

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