PTFC262157FH Datasheet, Fet, Infineon

PTFC262157FH Features

• Fet include a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliabilit

PDF File Details

Part number:

PTFC262157FH

Manufacturer:

Infineon ↗

File Size:

352.25kb

Download:

📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Inp

PTFC262157FH Application

• Applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum performance as the peak side tran

TAGS

PTFC262157FH

Infineon

📁 Related Datasheet

PTFC262808SV - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended f.

PTFC260202FC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt .

PTFC261402FC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
.

PTFC261402FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PTFC261402FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz Description The PTFC261402FC is a 140-watt LDMOS FET intended fo.

PTFC210202FC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt .

PTFC210202FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt .

PTFC270051M - High Power RF LDMOS Field Effect Transistor (Infineon)
PTFC270051M High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz Description The PTFC270051M is an unmatched 5-watt LDMOS FET suita.

PTFC270101M - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Description The PTFC270101M is an unmatched 10-watt LDMOS FET sui.

PTFC270101M - High Power RF LDMOS Field Effect Transistor (Infineon)
PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Description The PTFC270101M is an unmatched 10-watt LDMOS FET su.

PTFC101C1G0 - Platinum Temperature Sensors (TE)
 Platinum Temperature Sensor  Conformal to DIN EN 60751  Global interchangeability  Wide temperature range  Fast response time  Different tolera.