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PTFC262157FH Datasheet - Infineon

PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET

PTFC262157FH Features

* include a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262157FH Package H-34288G-4/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ =

PTFC262157FH-Infineon.pdf

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Datasheet Details

Part number:

PTFC262157FH

Manufacturer:

Infineon ↗

File Size:

352.25 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTFC262157FH PTFC262157FH Thermally-Enhanced High Power LDMOS FET Infineon

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