Part number:
PTFC262157FH
Manufacturer:
File Size:
352.25 KB
Description:
Thermally-enhanced high power rf ldmos fet.
PTFC262157FH Datasheet (352.25 KB)
* include a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262157FH Package H-34288G-4/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ =
PTFC262157FH Datasheet (352.25 KB)
PTFC262157FH
352.25 KB
Thermally-enhanced high power rf ldmos fet.
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