Datasheet Specifications
- Part number
- PTFC262157FH
- Manufacturer
- Infineon ↗
- File Size
- 352.25 KB
- Datasheet
- PTFC262157FH-Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FET
Description
PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 * 2690 MHz .
Features
* include a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262157FH Package H-34288G-4/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ =PTFC262157FH Distributors
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