PTFC210202FC Datasheet, Fet, Infineon

PTFC210202FC Features

• Fet
• Input matched
• Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB
• Capable of ha

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PTFC210202FC

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Infineon ↗

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110

PTFC210202FC Application

• Applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal per

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PTFC210202FC

Infineon

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