Datasheet Specifications
- Part number
- PTFC210202FC
- Manufacturer
- Infineon ↗
- File Size
- 545.71 KB
- Datasheet
- PTFC210202FC-Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FET
Description
PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 * 2200 MHz .Features
* Input matchedApplications
* in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC210202FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170PTFC210202FC Distributors
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