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PTFC210202FC Datasheet - Infineon

PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET

The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC210.

PTFC210202FC Features

* Input matched

* Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB

* Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power

* Integrated ESD protection : Human Body Mode

PTFC210202FC-Infineon.pdf

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Datasheet Details

Part number:

PTFC210202FC

Manufacturer:

Infineon ↗

File Size:

545.71 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTFC210202FC PTFC210202FC Thermally-Enhanced High Power LDMOS FET Infineon

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