PTFC210202FC - Thermally-Enhanced High Power RF LDMOS FET

Infineon

PTFC210202FC Datasheet Preview — Preview of PTFC210202FC PDF

Datasheet Details

Part number	PTFC210202FC
Manufacturer	Infineon ↗
File Size	545.71 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFC210202FC-Infineon.pdf

PTFC210202FC Product details

Description

The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band.

Features

Input matched.
Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB.
Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power.
Integrated ESD protection : Human Body Mode.

📁 PTFC210202FC Similar Datasheet

PTFC270101M - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
PTFC101C1G0 - Platinum Temperature Sensors (TE)
PTF - Metal Film Resistors (Vishay)
PTF080101 - LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ (Infineon Technologies AG)
PTF080101S - LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ (Infineon Technologies AG)
PTF080451 - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz (Infineon Technologies AG)
PTF080451E - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz (Infineon Technologies AG)
PTF080601 - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz (Infineon Technologies AG)

Other Datasheets by Infineon

PTFC260202FC - Thermally-Enhanced High Power RF LDMOS FET
PTFC261402FC - Thermally-Enhanced High Power RF LDMOS FET
PTFC262157FH - Thermally-Enhanced High Power RF LDMOS FET
PTFC262808SV - Thermally-Enhanced High Power RF LDMOS FET
PTFC270051M - High Power RF LDMOS Field Effect Transistor
PTFA041501E - Thermally-Enhanced High Power RF LDMOS FETs

Published: Feb 25, 2016 |