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PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET

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Description

PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 * 2200 MHz .
The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz freq.

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Features

* Input matched
* Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB
* Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power
* Integrated ESD protection : Human Body Mode

Applications

* in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC210202FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170

PTFC210202FC Distributors

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTFC210202FC-like datasheet