PTFC270101M - High Power RF LDMOS Field Effect Transistor

Wolfspeed

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Datasheet Details

Part number: PTFC270101M
Manufacturer: Wolfspeed
File Size: 1.44 MB
Datasheet: PTFC270101M-Wolfspeed.pdf
Description: High Power RF LDMOS Field Effect Transistor

PTFC270101M Product details

Description

The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to t 2700 MHz.This LDMOS transistor offers excellent gain, efficiency c and linearity performance in a small overmolded plastic package.PTFC270101M Package PG-SON-10 Gain (dB) Drain Efficiency (%) du Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz, o 3GPP WCDMA signal, 8 dB PAR, r 10 MHz carrier spacing, 3.84 MHz bandwidth 23 70 p 22 60 Gain d 21

Features

Unmatched input and output.
Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10 W - Gain = 20 dB - Efficiency = 60%.
Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficiency = 21% - ACPR =.
44.9 dBc @ 5 MHz.
Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power.
Integrated ESD protection.
Pb-free and RoHS compliant dis RF Characteristics Two-carrier.

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High Power LDMOS Field Effect Transistor Wolfspeed

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