Effect Datasheet | Specifications & PDF Download

Bipolar, Latching, and Unipolar Hall-effect Digital Position Sensor ICs: SS400 Series, SS500 Series 32320997 Issue B Datasheet FEATURES • Quad Hall

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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ACS712 Fully Integrated, Hall-Effect-Based Linear Current Sensor IC with 2.4 kVRMS Isolation and a Low-Resistance Current Conductor FEATURES AND BENE

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconducto

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

Rating: 1 ★ (10 votes)

NIKO-SEM N-Channel Logic Level Enhancement P1203BVA Mode Field Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON

Rating: 1 ★ (9 votes)

EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Channel

Rating: 1 ★ (9 votes)

3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic fi

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DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07

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STU/D432S SamHop Microelectronics Corp. Nov,19,2007 ver1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 PRODUCT SUMMARY VDSS 40V

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DMC2004LPK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage VG

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FEELING TECHNOLOGY LINEAR HALL-EFFECT SENSORS Features Extremely Sensitive Flat Response to 23 KHz Low-Noise Output 2.7V to 7V Operation Available in

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Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect NDT3055L General Description This Logic Level N−Channel enhancement mode power fie

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -30V RDSON (MAX.) 44mΩ ID -4A G S Pb-Free Lead Plati

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 14mΩ ID -12A P Channel MOSFET UIS, Rg

Rating: 1 ★ (7 votes)