Effect Datasheet | Specifications & PDF Download

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested

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www.irantk.ir XY6112 Cost-effective off-line switching power supply controller - Shanghai Vision Institute of Electronic Technology Co., Ltd. Page 1 o

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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OCS Confidential DO NOT COPY OCH2987 350mA Single Phase Hall-Effect DC Fan Driver  General Description The OCH2987 is an integrated Hall sensor w

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Features ─ Miniature construction ─ Low-Noise Output ─ 4.5 V to 6 V Operation ─ Magnetically Optimized Package ─ Linear output for circuit design flex

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Data Sheet SINGLE PHASE HALL EFFECT LATCH General Description The AH477A is an integrated Hall sensor with Hbridged output driver designed for brushle

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OB3350 Cost Effective LED Controller GENERAL DESCRIPTION OB3350 is a highly integrated and cost effective Light Emitting Diode (LED) driver optimized

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A1281 Specification Low Sensitivity Unipolar Hall Effect Switch A1281 is an Unipolar Hall switch of low operating voltage and low sensitivity. DMOS

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ACS712 Fully Integrated, Hall-Effect-Based Linear Current Sensor IC with 2.4 kVRMS Isolation and a Low-Resistance Current Conductor FEATURES AND BENE

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Hardware Documentation Data Sheet HAL® 5xy Hall-Effect Sensor Family Edition April 15, 2010 DSH000020_004E HAL 5xy DATA SHEET Copyright, Warranty,

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Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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W W W .ORIENT-1 2C 3HIP.COM ◼ # General Description The OCH1931 is a small, versatile linear Hall-effect device that is operated by the magnetic f

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SS41F Low Gauss Bipolar Hall-effect Sensor DESCRIPTION The SS41F is a sensitive, bipolar Hall-effect sensor. This magnetic sensor offers reverse powe

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GPT10N50A, GPT10N50AD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg

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