GPT10N50AD Datasheet Power Field Effect Transistor

Manufacturer: Greatpower

Overview: GPT10N50A, GPT10N50AD POWER FIELD EFFECT TRANSISTOR GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	GPT10N50AD
Manufacturer	Greatpower
File Size	1.17 MB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT10N50AD GPT10N50A Datasheet (PDF)

This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offer.

Part Number	Description
GPT10N50A	POWER FIELD EFFECT TRANSISTOR
GPT10N45	POWER FIELD EFFECT TRANSISTOR
GPT10N45D	POWER FIELD EFFECT TRANSISTOR
GPT10N60	POWER FIELD EFFECT TRANSISTOR
GPT10N60D	POWER FIELD EFFECT TRANSISTOR
GPT10N65	POWER FIELD EFFECT TRANSISTOR
GPT10N65D	POWER FIELD EFFECT TRANSISTOR
GPT11N65	POWER FIELD EFFECT TRANSISTOR
GPT11N65D	POWER FIELD EFFECT TRANSISTOR
GPT11N70	POWER FIELD EFFECT TRANSISTOR