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GPT10N50AD - POWER FIELD EFFECT TRANSISTOR

Download the GPT10N50AD datasheet PDF. This datasheet also covers the GPT10N50A variant, as both devices belong to the same power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offer.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GPT10N50A-Greatpower.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GPT10N50AD
Manufacturer Greatpower
File Size 1.17 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT10N50AD Datasheet

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Other Datasheets by Greatpower

Part Number Description
GPT10N50A POWER FIELD EFFECT TRANSISTOR
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GPT10N60D POWER FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GPT10N50A, GPT10N50AD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time.