Datasheet4U Logo Datasheet4U.com

GPT10N45 - POWER FIELD EFFECT TRANSISTOR

General Description

GPT10N45 GPT10N45D POWER FIELD EFFECT TRANSISTOR

Key Features

  • This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching.

📥 Download Datasheet

Datasheet Details

Part number GPT10N45
Manufacturer Greatpower
File Size 1.18 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT10N45 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GPT1000A General Touch Sensor Controller Generalplus
GPT1001A General Touch Sensor Controller Generalplus
GPT8340A 46 TOUCH IO Generalplus
GPT8P340A1 46 TOUCH IO Generalplus
GPTP1270 PHASE CONTROLLED SCR Green Power Solutions srl

Other Datasheets by Greatpower

Part Number Description
GPT10N45D POWER FIELD EFFECT TRANSISTOR
GPT10N50A POWER FIELD EFFECT TRANSISTOR
GPT10N50AD POWER FIELD EFFECT TRANSISTOR
GPT10N60 POWER FIELD EFFECT TRANSISTOR
GPT10N60D POWER FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GENERAL DESCRIPTION GPT10N45 GPT10N45D POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.