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GPT10N60D - POWER FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the GPT10N60D, a member of the GPT10N60 POWER FIELD EFFECT TRANSISTOR family.

Datasheet Summary

Features

  • This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching.

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Datasheet Details

Part number GPT10N60D
Manufacturer Greatpower
File Size 1.17 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT10N60D Datasheet
Additional preview pages of the GPT10N60D datasheet.

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Full PDF Text Transcription

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GPT10N60 / GPT10N60D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
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