GPT10N60D datasheet by Greatpower.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | GPT10N60D |
|---|---|
| Datasheet | GPT10N60D GPT10N60 Datasheet (PDF) |
| File Size | 1.17 MB |
| Manufacturer | Greatpower |
| Description | POWER FIELD EFFECT TRANSISTOR |
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FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
View all Greatpower datasheets
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|---|---|
| GPT10N60 | POWER FIELD EFFECT TRANSISTOR |
| GPT10N65 | POWER FIELD EFFECT TRANSISTOR |
| GPT10N65D | POWER FIELD EFFECT TRANSISTOR |
| GPT10N45 | POWER FIELD EFFECT TRANSISTOR |
| GPT10N45D | POWER FIELD EFFECT TRANSISTOR |
| GPT10N50A | POWER FIELD EFFECT TRANSISTOR |
| GPT10N50AD | POWER FIELD EFFECT TRANSISTOR |
| GPT11N65 | POWER FIELD EFFECT TRANSISTOR |
| GPT11N65D | POWER FIELD EFFECT TRANSISTOR |
| GPT11N70 | POWER FIELD EFFECT TRANSISTOR |
