Datasheet4U Logo Datasheet4U.com

GPT10N45D - POWER FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the GPT10N45D, a member of the GPT10N45 POWER FIELD EFFECT TRANSISTOR family.

Datasheet Summary

Description

GPT10N45 GPT10N45D POWER FIELD EFFECT TRANSISTOR

Features

  • This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching.

📥 Download Datasheet

Datasheet preview – GPT10N45D

Datasheet Details

Part number GPT10N45D
Manufacturer Greatpower
File Size 1.18 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT10N45D Datasheet
Additional preview pages of the GPT10N45D datasheet.

📁 Similar Datasheet

  • GPT1000A - General Touch Sensor Controller (Generalplus)
  • GPT1001A - General Touch Sensor Controller (Generalplus)
  • GPT8340A - 46 TOUCH IO (Generalplus)
  • GPT8P340A1 - 46 TOUCH IO (Generalplus)
  • GPTP1270 - PHASE CONTROLLED SCR (Green Power Solutions srl)
  • GPTP2157 - PHASE CONTROLLED SCR (Green Power Solutions srl)
  • GPTP2164 - PHASE CONTROLLED SCR (Green Power Solutions srl)
  • GPTP2165 - PHASE CONTROLLED SCR (Green Power Solutions srl)
  • GPTP2190 - PHASE CONTROLLED SCR (Green Power Solutions srl)
  • GPTP2199 - PHASE CONTROLLED SCR (Green Power Solutions srl)
Other Datasheets by Greatpower

Full PDF Text Transcription

Click to expand full text
GENERAL DESCRIPTION GPT10N45 GPT10N45D POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Published: |