GPT10N50A Description
FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time parable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and mutation modes. The new energy...