Datasheet Summary
GPT10N50A, GPT10N50AD
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
Features
This high voltage MOSFET uses an advanced termination
Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability
Avalanche Energy Specified without degrading performance over time. In addition, this
Source-to-Drain Diode Recovery Time parable to a advanced MOSFET is designed to withstand high energy in
Discrete Fast Recovery Diode avalanche and mutation modes. The new energy
Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a
IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed...