k246 Overview
Key Features
- High breakdown voltage: VGDS = -50 V
- High input impedance: IGSS = -1 nA (max) (VGS = -30 V)
| Part | k246 |
|---|---|
| Description | Silicon N-Channel Junction Type Field Effect Transistor |
| Category | Transistor |
| Manufacturer | Toshiba |
| Size | 223.87 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| K2461 | NEC | 2SK2461 |
| K2462 | NEC | 2SK2462 |
| K24C256 | K-Line | Two-Wire Serial EEPROM |
| K2401 | Toshiba | 2SK2401 |
| K24C08 | K-Line | EEPROM |