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Field

Field DataSheet

Silan

40N60NPFD - 600V FIELD STOP IGBT

 · 464 Hits  40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A  Low conduction loss  Fast switching  High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT...
Excelliance MOS

B09N03 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

 · 174 Hits pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2012/3/9 p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL ...
TRinno

TGAN20N135FD - Field Stop Trench IGBT

 · 164 Hits •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS ...
Alpha & Omega Semiconductors

AO4712 - N-Channel Enhancement Mode Field Effect Transistor

 · 124 Hits VDS (V) = 30V ID =11.2A (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G www.DataS...
Excelliance MOS

A06N03N - N-Channel Logic Level Enhancement Mode Field Effect Transistor

 · 117 Hits maximum junction temperature.  2Duty cycle  1％            1.8  °C / W  75  2013/8/21  p.1    ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless O...
Toshiba

k246 - N-CHANNEL JUNCTION TYPE Field Effect Transistor

 · 104 Hits Hz Ciss VDS = 10 V, VGS = 0, f = 1 MHz Crss VDG = 10 V, ID = 0, f = 1 MHz Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA Min ...
Fairchild Semiconductor

FGH40N60SFD - 40A Field Stop IGBT

 · 96 Hits • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications...
Toshiba

K2717 - Silicon N Channel MOS Type Field Effect Transistor

 · 70 Hits istance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.78 62.5 °C / W °C / W Note 1: Please use devices on condit...
Silan

SGT40N60NPFDPN - 600V FIELD STOP IGBT

 · 54 Hits  40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A  Low conduction loss  Fast switching  High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT...
Joy-IT

KY-003 - Hall Magnetic Field Sensor

 · 53 Hits l Magnetic Field Sensor 3. CODE EXAMPLE ARDUINO This is an example program that lights up an LED when a signal is detected on the sensor. The KY-011, ...
MagnaChip

MBQ60T65PES - High Speed Fieldstop Trench IGBT

 · 48 Hits  High Speed Switching & Low Power Loss  VCE(sat) = 1.85V @ IC = 60A  Eoff = 0.53mJ @ TC = 25°C  High Input Impedance  trr = 110ns (typ.) @diF/dt ...
TRinno

TGAN40N60F2DS - Field Stop Trench IGBT

 · 44 Hits • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel Operatio...
CET

CEP3205 - N-Channel Enhancement Mode Field Effect Transistor

 · 41 Hits 55V, 108.5A, RDS(ON) = 8.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free ...
TRinno

TGD30N40P - Field Stop Trench IGBT

 · 40 Hits • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant •...
SamHop Microelectronics

STM4639 - P-Channel Enhancement Mode Field Effect Transistor

 · 38 Hits Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Procteced D D D 5 6 7 8 4 3 2 1 G S S S SO-8 1 D ...
Toshiba

K4113 - Field Effect Transistor Silicon N Channel MOS Type

 · 38 Hits rature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if th...
Excelliance MOS

EMBA5N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor

 · 37 Hits  / W  p.1      ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)  PARAMETER  SYMBOL TEST CONDITIONS  EMBA5N10A LIMITS  UNIT MI...
Feihonltd

FHP20N40 - N-channel enhancement mode power MOS field FET

 · 36 Hits       9'6 9 9'6 9  38/6( '85$7,21 μV '87< &<&/(  0$; 9'' 9   7- R& 7- R&         ...
TRinno

TGAN60N60FD - Field Stop Trench IGBT

 · 34 Hits • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS ...
Silan Microelectronics

60N60FD1 - 600V FIELD-STOP IGBT

 · 34 Hits  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 12...
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