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Field Datasheet, Features, Application

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Silan

40N60NPFD - 600V FIELD STOP IGBT

SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu.
4.0 · rating-4rating-4rating-4rating-4
Excelliance MOS

A06N03N - N-Channel Logic Level Enhancement Mode Field Effect Transistor

  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%.
1.0 · rating-1
MagnaChip

MBQ60T65PES - High Speed Fieldstop Trench IGBT

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th.
1.0 · rating-1
Silan Microelectronics

60N60FD1 - 600V FIELD-STOP IGBT

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog.
1.0 · rating-1
Joy-IT

KY003 - Hall Magnetic Field Sensor

3 Hall Magnetic Field Sensor KY-003 Hall Magnetic Field Sensor TABLE OF CONTENTS 1. Overview 2. Pin-Assignment 3. Code Example Arduino 4. Code Exampl.
1.0 · rating-1
Toshiba

K2717 - Silicon N Channel MOS Type Field Effect Transistor

2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low d.
1.0 · rating-1
Toshiba

k246 - Silicon N-Channel Junction Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif.
1.0 · rating-1
TRinno

TGPF30N43P - Field Stop Trench IGBT

TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati.
1.0 · rating-1
Fairchild Semiconductor

FGA60N65SMD - 60A Field Stop IGBT

FGA60N65SMD — 650 V, 60 A Field Stop IGBT October 2013 FGA60N65SMD 650 V, 60 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = • High.
1.0 · rating-1
Alpha & Omega Semiconductors

AO4712 - N-Channel Enhancement Mode Field Effect Transistor

SRFET TM AO4712 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4712 uses advanced trench technology with a mo.
1.0 · rating-1
Excelliance MOS

EMBA5N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg.
1.0 · rating-1
Cmos

CMP1405 - N-Channel Enhancement Mode Field Effect Transistor

CMP1405/CMB1405 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 1405 is a N-channel Power MOSFET. It ha.
1.0 · rating-1
SamHop Microelectronics

STU3055L2-60 - N-Channel Enhancement Mode Field Effect Transistor

www.DataSheet4U.com STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUM.
1.0 · rating-1
Toshiba Semiconductor

TPC8018-H - Silicon N-Channel MOS Type Field Effect Transistor

TPC8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8018-H High-Speed and High-Efficiency DC/DC Conve.
1.0 · rating-1
TRinno

TGAN40N60F2DS - Field Stop Trench IGBT

Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel.
1.0 · rating-1
TRinno

TGAN40N60FD - Field Stop Trench IGBT

Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation.
1.0 · rating-1
TRinno

TGAN60N60FD - Field Stop Trench IGBT

Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
1.0 · rating-1
TRinno

TGAN20N135FD - Field Stop Trench IGBT

Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
1.0 · rating-1
Greatpower

GPT10N50AD - POWER FIELD EFFECT TRANSISTOR

GPT10N50A, GPT10N50AD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High.
1.0 · rating-1
Toshiba

TTK2837 - Silicon N Channel Field Effect Transistor

TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TTK2837 Switching Regulator Applications • Low drain-source on-resistance.
1.0 · rating-1
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